MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gas

We present an ensemble Monte Carlo model for the modulation-doped field-effect transistor in which quantization in the conduction channel is included using a two-subband triangular-well approximation. The subband population is investigated under different bias conditions in order to evaluate the influence of quantum effects on the electron conduction. It is found that, according to the model, the subband population may be severely reduced at high drain voltages, and that the appearance of stray conduction paths across the AlGaAs region may be a source of performance degradation.