• DocumentCode
    1108281
  • Title

    Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor

  • Author

    Subramanian, Sivaramakrishna ; Vengurlekar, A.S. ; Diwan, Ajit A.

  • Author_Institution
    Tata Institute of Fundamental Research, Bombay, India
  • Volume
    33
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    707
  • Lastpage
    711
  • Abstract
    A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.
  • Keywords
    Circuit noise; Digital circuits; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Ionization; MODFET circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22555
  • Filename
    1485772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108281