• DocumentCode
    1108335
  • Title

    Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs

  • Author

    Yun, J.S. ; Shim, J.I. ; Shin, D.S.

  • Author_Institution
    Dept. of Electr. & Comput. Sci. Eng., Hanyang Univ., Ansan
  • Volume
    45
  • Issue
    13
  • fYear
    2009
  • Firstpage
    703
  • Lastpage
    705
  • Abstract
    An electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.
  • Keywords
    III-V semiconductors; electrodes; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; GaN-InGaN; blue light-emitting diode; current spreading; electrode pattern design; luminance distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0803
  • Filename
    5117405