DocumentCode
1108335
Title
Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs
Author
Yun, J.S. ; Shim, J.I. ; Shin, D.S.
Author_Institution
Dept. of Electr. & Comput. Sci. Eng., Hanyang Univ., Ansan
Volume
45
Issue
13
fYear
2009
Firstpage
703
Lastpage
705
Abstract
An electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.
Keywords
III-V semiconductors; electrodes; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; GaN-InGaN; blue light-emitting diode; current spreading; electrode pattern design; luminance distribution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.0803
Filename
5117405
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