• DocumentCode
    1108580
  • Title

    A role of source n-region in LDD MOSFET´s

  • Author

    Takeda, Eiji ; Shimizu, Akihiro ; Kume, Hitoshi ; Itoh, Kiyoo

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    869
  • Lastpage
    870
  • Abstract
    A new role of source n-region in lightly doped drain (LDD) MOSFET\´s is presented. This is "bipolar action" reduction due to n-source resistance, which determines the drain-sustaining voltage. Also, the n-resistance can be directly measured by using this phenomenon.
  • Keywords
    Degradation; Electrical resistance measurement; Electrons; Fabrication; Hot carrier effects; Hot carriers; Impurities; Transconductance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22583
  • Filename
    1485800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108580