NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology

Author

Ang, Boon ; Tumakha, Sergey ; Im, Jay ; Paak, Sunhom S.

Author_Institution

Xilinx Inc., San Jose

Volume

7

Issue

2

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

298

Lastpage

303

Abstract

The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide-semiconductor technology were studied. Under optimal programming conditions, high postprogram resistance can be achieved. These well-programmed fuses showed good data retention under unbiased temperature stress test. In order to avoid read disturb of unprogrammed fuses, the read current has to be kept below the threshold for silicide electromigration.

Keywords

CMOS logic circuits; CMOS memory circuits; electromigration; integrated circuit reliability; nickel compounds; NiSi - Interface; NiSi polysilicon fuse reliability; data retention; logic CMOS technology; logic complimentary metal-oxide-semiconductor technology; optimal programming conditions; postprogram resistance; silicide electromigration; size 65 nm; unbiased temperature stress test; Anodes; CMOS logic circuits; CMOS technology; Cathodes; Fuses; Logic programming; Silicides; Temperature; Testing; Voltage; Data retention; NiSi; efuse; electromigration; fuse; one-time programmable (OTP); read disturb;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2007.901870

Filename

4295075