A Novel Fin Electron–Hole Bilayer Tunnel Field-Effect Transistor

Author

Zhengyong Zhu ; Huilong Zhu ; Miao Xu ; Jian Zhong ; Chao Zhao ; Dapeng Chen ; Tianchun Ye

Author_Institution

Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

Volume

13

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

1133

Lastpage

1137

Abstract

A novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET) is proposed and investigated by simulation. In this structure, a narrow fin is placed at the middle of a conventional p⁺-i-n ⁺ tunnel field-effect transistor, and two separate gates formed on left and right sides of the fin are used to control the channel. The FinEHBTFET achieves drive current when band-to-band tunneling happens between the bias-induced electron-hole bilayer at the two sides of the fin. The FinEHBTFET shows a high I_on/I_off ratio more than 10⁶, and an average SS of 3 mV/dec over three decades of drain current.

Keywords

MOSFET; tunnel transistors; FinEHBTFET; band-to-band tunneling; fin electron-hole bilayer tunnel field-effect transistor; p+-i-n+ tunnel field-effect transistor; Dielectrics; Doping; Educational institutions; Leakage currents; Logic gates; Transistors; Tunneling; Band-to-band tunneling (BTBT); fin; novel fin electron???hole bilayer tunnel field-effect transistor (FinEHBTFET); subthreshold swing (SS); tunnel field-effect transistor (TFET);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2014.2342765

Filename

6866188