• DocumentCode
    1110320
  • Title

    High-frequency noise measurements on FET´s with small dimensions

  • Author

    Abidi, A.A.

  • Author_Institution
    University of California, Los Angeles, CA
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1801
  • Lastpage
    1805
  • Abstract
    A low-noise high-frequency transresistance amplifier has been used to accurately measure broad-band noise in MOSFET\´s with small widths and submicrometer channel lengths. The technique allows noise characterization up to frequencies of 100 MHz of the small devices available as process test arrays from different fabrication lines. The noise in the different portions of the I-V characteristics of submicrometer MOSFET\´s has been characterized and shown to be greater by factors of 2 to 4 than the noise expected from long-channel noise theory.
  • Keywords
    FETs; Fabrication; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Noise measurement; Optical noise; Semiconductor device measurement; Testing; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22743
  • Filename
    1485960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110320