Multilayer, low-parasitic, interconnection scheme for advanced submillimetre-wave GaN circuits

Author

Margomenos, A. ; Shinohara, K. ; Regan, D.C. ; Corrion, A.L. ; Brown, D.F. ; Tang, Yuchen ; Butler, Charles ; Schmitz, A. ; Robinson, J.F. ; Kim, Sungho ; McGuire, C. ; Micovic, M.

Author_Institution

HRL Labs. LLC, Malibu, CA, USA

Volume

50

Issue

4

fYear

2014

fDate

February 13 2014

Firstpage

302

Lastpage

303

Abstract

A multilayer, low-parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported. The fabrication process offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air-box in the active area in order to minimise the gate parasitic capacitances. With the addition of the air-box, it is demonstrated that the performance of the BCB encapsulated device is similar to that of a non-encapsulated device. Furthermore, by utilising the multilayer interconnection scheme a low-loss (0.75 dB) 3 dB tandem coupler operating from 140 to 220 GHz is demonstrated.

Keywords

III-V semiconductors; capacitance; gallium compounds; gold; high electron mobility transistors; integrated circuit interconnections; organic compounds; submillimetre wave integrated circuits; submillimetre wave transistors; wide band gap semiconductors; Au; GaN; HEMT; advanced submillimetre-wave GaN circuits; benzocy- clobutene dielectric; frequency 140 GHz to 220 GHz; gate parasitic capacitances; highly scaled GaN high electron mobility transistors; low-parasitic interconnection scheme; multilayer interconnection scheme;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.3564

Filename

6746295