• DocumentCode
    1110744
  • Title

    Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure

  • Author

    Yoo, Bum-Soo ; Park, Hyun-Hee ; Lee, E.-H.

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Taejon
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1060
  • Lastpage
    1061
  • Abstract
    The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40 μm diameter device, the threshold current density for room-temperature CW operation was as low as 380 A/cm2 with light output power of more than 11 mW
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 11 mW; 40 mum; InGaAs; light output power; low threshold current densities; low threshold current density; periodic gain active structure; room-temperature CW operation; surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940719
  • Filename
    294798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110744