DocumentCode

1110859

Title

IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement

Author

Lee, G.Y. ; Baier, S.M. ; Chung, Hyun Kyu ; Fure, B.J.

Volume

33

Issue

11

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1851

Lastpage

1851

Keywords

FETs; Fabrication; Gallium arsenide; HEMTs; Implants; Logic; MESFET circuits; MODFETs; Pulse inverters; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1986.22793

Filename

1486010