• DocumentCode
    1110928
  • Title

    Visible laser diodes grown by metal organic vapour phase epitaxy (MOVPE)

  • Author

    Roberts, Jeffrey S. ; Hamilton, C.J. ; McIlvaney, K. ; Marsh, John H.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ.
  • Volume
    32
  • Issue
    16
  • fYear
    1996
  • fDate
    8/1/1996 12:00:00 AM
  • Firstpage
    1491
  • Lastpage
    1493
  • Abstract
    Visible (682 nm) InAlGaAs oxide stripe lasers have been fabricated on atmospheric pressure MOVPE grown material. Lowering the oxygen residue of the metal organic reagents allows uniform deposition of high optical quality InAlGaAs QWs at ~600°C. A separate confinement heterostructure laser using a single QW lased at room temperature with J ∞ of 1.23 kAcm2
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; quantum well lasers; vapour phase epitaxial growth; 600 to 620 C; 682 nm; InAlGaAs; InAlGaAs oxide stripe lasers; SCL laser; atmospheric pressure MOVPE grown material; high optical quality QWs; metal organic vapour phase epitaxy; separate confinement heterostructure laser; uniform deposition; visible laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960982
  • Filename
    511916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110928