• DocumentCode
    1110973
  • Title

    High brightness low voltage mesa style ZnSe light emitting diodes

  • Author

    Rennie, J. ; Onomura, Masaaki ; Nishikawa, Yoshihiro ; Saito, Sakuyoshi ; Nitta, Katsumi ; Ishikawa, Masatoshi ; Hatakoshi, G.

  • Author_Institution
    Res. & Dev. Center, Toshiba Corp., Kawasaki
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1090
  • Lastpage
    1091
  • Abstract
    The authors have developed a ZnSe based blue-green (500 m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200 μW (3 cd) for a current of 30 mA, under an operating voltage of 8.6 V, and had a record efficiency of 0.26%
  • Keywords
    II-VI semiconductors; light emitting diodes; zinc compounds; 200 muW; 30 mA; 500 nm; 8.6 V; GaAs; ZnSe; ZnSe light emitting diodes; high brightness; low voltage; mesa structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940717
  • Filename
    294819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110973