DocumentCode
1111024
Title
Lateral hybrid emitter short MOS controlled thyristor
Author
Amaratunga, G.A.J.
Volume
30
Issue
13
fYear
1994
fDate
6/23/1994 12:00:00 AM
Firstpage
1095
Lastpage
1097
Abstract
A new integrable lateral hybrid emitter short MOS controlled thyristor structure (LHMT) is proposed and its operation is characterised through 2-D device simulation. The simulations indicate that the forward voltage drop of the LHMT is a factor of 3 lower than that of the LIGBT at a current 180 A/cm2, while the turn-off time is practically the same for both. Furthermore, the maximum controllable current of the LHMT is at least twice as large as that of other lateral thyristor structures proposed so far, and around 85% of that of the LIGBT. These features are expected to make the LHMT very attractive for high-voltage and power IC applications
Keywords
insulated gate field effect transistors; power integrated circuits; semiconductor device models; thyristor applications; thyristors; 2D device simulation; forward voltage drop; high-voltage IC applications; lateral hybrid emitter short MOS controlled thyristor; lateral thyristor structures; maximum controllable current; power IC applications; turn-off time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940689
Filename
294823
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