• DocumentCode
    1111783
  • Title

    Surface-mounted GaAs active splitter and attenuator MMIC´s used in a 1—10-GHz leveling loop

  • Author

    Barta, Gary S. ; Jones, Keith E. ; Herrick, Geoffrey C. ; Strid, Eric W.

  • Author_Institution
    TriQuint Semiconductor, Inc., Tektronix Industrial Park, Beaverton, OR
  • Volume
    33
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    2100
  • Lastpage
    2106
  • Abstract
    A wide-band monolithic GaAs bridge-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact 1-10-GHz leveling loop having a minimum 9-dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1-10-GHz bandwidth by the use of on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1-10-GHz bandwidth by the use of distributed amplification. The entire 4.5-cm by 4.2-cm subsystem was realized with surface mount packages on RT-Duroid®, demonstrating new construction techniques for GaAs MMIC assembly.
  • Keywords
    Application specific integrated circuits; Attenuation; Attenuators; Bandwidth; FETs; Gallium arsenide; MMICs; Microwave integrated circuits; Microwave theory and techniques; Packaging;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22875
  • Filename
    1486092