• DocumentCode
    1111870
  • Title

    Electrical characteristics of Be-implanted GaAs activated by rapid thermal annealing

  • Author

    Maezawa, Koichi ; Oe, Kunishige

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    13
  • Lastpage
    15
  • Abstract
    Be-implanted GaAs are annealed by rapid thermal annealing (RTA) using halogen lamps. Electrical properties of the annealed GaAs are investigated, emphasizing those at 77K for application to the p+-layer of Be-implanted WSix-gate self-aligned two-dimensional hole gas (2- DHG) FET. An electrical activation of 90 percent (for 2.0 × 1013cm-2) or 80 percent (for 2.2 × 1014cm-2) is obtained. An annealing temperature dependence of carrier freezing at 77K is observed for higher dose samples. The phenomenon is attributed to the redistribution of impurity atoms near the high-concentration peak.
  • Keywords
    Electric variables; Gallium arsenide; HEMTs; Lamps; MESFETs; MODFETs; Rapid thermal annealing; Silicon; Temperature dependence; Two dimensional hole gas;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26276
  • Filename
    1486099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111870