• DocumentCode
    1112128
  • Title

    GaAs power FET´s having the gate recess narrower than the gate

  • Author

    Macksey, H.M.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    GaAs power FET´s have been fabricated with the gate recess narrower than the gate. The fabrication process for this new channel structure is described and microwave performance is presented. The best device had greater than 1 W output power per millimeter gate width at 10 GHz.
  • Keywords
    Chemical processes; FETs; Fabrication; Gallium arsenide; Lithography; Microwave devices; Power generation; Resists; Shape; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26297
  • Filename
    1486120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112128