• DocumentCode
    1113273
  • Title

    Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures

  • Author

    Ackelid, Ulf ; Armgarth, M. ; Spetz, A. ; Lundström, I.

  • Author_Institution
    Linköping Institute of Technology, Linköping, Sweden
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    353
  • Lastpage
    355
  • Abstract
    Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
  • Keywords
    Atomic layer deposition; Capacitance; Chemical technology; Ethanol; Hydrogen; MOS capacitors; Palladium; Physics; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26398
  • Filename
    1486221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113273