• DocumentCode
    1113385
  • Title

    Fully implanted p-column InP field-effect transistor

  • Author

    Woodhouse, J.D. ; Donnelly, J.P.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    387
  • Lastpage
    389
  • Abstract
    P-column junction field-effect transistors (FET\´s) have been fabricated in semi-insulating InP utilizing an all-implanted planar technology. A periodic array of p+ columns implanted through an n-type channel layer is used to form the active region. Initial devices with nominal gate lengths of 4 µm exhibit a unity-power-gain frequency f_{\\max } as high as 7 GHz while recent smaller gate length devices (nominally 1.7µm) show an f_{\\max } of 16 GHz.
  • Keywords
    Etching; FETs; Frequency; Gallium arsenide; Implants; Indium phosphide; Metallization; Millimeter wave technology; Millimeter wave transistors; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26409
  • Filename
    1486232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113385