• DocumentCode
    1113390
  • Title

    High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 Vpp) output swing at 40 Gb/s

  • Author

    Baeyens, Yves ; Weimann, Nils ; Roux, Pascal ; Leven, Andreas ; Houtsma, Vincent ; Kopf, Rose F. ; Yang, Yang ; Frackoviak, John ; Tate, Alaric ; Weiner, Joseph S. ; Paschke, Peter ; Chen, Young-Kai

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • Volume
    39
  • Issue
    10
  • fYear
    2004
  • Firstpage
    1697
  • Lastpage
    1705
  • Abstract
    High-performance and compact 40-Gb/s driver amplifiers were realized in 1.2-μm emitter double-heterojunction InGaAs-InP HBT (D-HBT) technology with a maximum cut-off frequency (fT) of 150 GHz and a maximum oscillation frequency (fmax) of 200 GHz. Two-stage differential drivers feature a lumped input and fully distributed output stage and deliver a maximum differential output swing of 11.3 V peak-to-peak (Vpp) at 40 Gb/s with less then 350 fs of added rms jitter and rise and fall times of about 7 ps while consuming a total power of 3 W. When biased at a lower output swing of 6.3 Vpp, excellent 40-Gb/s eyes with a 7-ps fall time, 6-ps rise time, and no observable jitter deterioration compared with the input source are obtained at a reduced power consumption of 1.7 W. On-wafer measured differential S-parameters show a differential gain of 25 dB, 50 GHz bandwidth, and input and output reflection below -20 dB from 2 to 45 GHz. The amplifiers´ small die size (1.0×1.7 mm), relatively low power consumption, large output swing, and ability to have dc coupled inputs and outputs enable compact 40-Gb/s optical transmitters with good eye opening for both conventional transmission formats such as nonreturn-to-zero and return-to-zero and alternative formats such as duobinary and differential phase shift keying.
  • Keywords
    III-V semiconductors; bipolar MIMIC; differential amplifiers; distributed amplifiers; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; jitter; millimetre wave amplifiers; 1.2 micron; 1.7 W; 11.3 V; 150 GHz; 2 to 45 GHz; 200 GHz; 3 W; 40 Gbit/s; 40Gb/s driver amplifiers; D-HBT technology; In-GaAs-InP; cut-off frequency; dc coupled inputs; dc coupled outputs; differential InP D-HBT driver amplifiers; differential phase shift keying; distributed InP D-HBT driver amplifiers; distributed output stage; double-heterojunction In-GaAs-InP HBT; duobinary phase shift keying; high-voltage broadband amplifiers; indium phosphide heterojunction bipolar transistors; jitter deterioration; maximum differential output swing; maximum oscillation frequency; optical modulator driver amplifier; optical transmitters; power consumption; rms jitter; transmission formats; Cutoff frequency; Differential amplifiers; Distributed amplifiers; Driver circuits; Energy consumption; Eyes; Heterojunction bipolar transistors; Indium phosphide; Jitter; Optical amplifiers; Distributed amplifiers; high-voltage broadband amplifiers; indium phospide heterojunction bipolar transistors; optical modulator driver amplifier;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2004.833548
  • Filename
    1336998