• DocumentCode
    1113416
  • Title

    Effects of a buried p-layer on alpha-particle immunity of MESFET´s fabricated on semi-insulating GaAs substrates

  • Author

    Umemoto, Y. ; Masuda, N. ; Mitsusada, K.

  • Author_Institution
    Hitachi, Ltd., Tokyo, Japan
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    396
  • Lastpage
    397
  • Abstract
    Measurements of alpha-particle-induced charge are carried out for the first time on both conventional MESFET´s fabricated directly on semi-insulating GaAs substrates and MESFET´s with a buried p-layer. The maximum collected charge is found to be 65 fC in the MESFET´s with a buried p-layer, one order smaller than in conventional MESFET´s.
  • Keywords
    Alpha particles; Charge carrier processes; Charge measurement; Circuits; Current measurement; Gallium arsenide; MESFETs; Packaging; Parasitic capacitance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26412
  • Filename
    1486235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113416