DocumentCode
1113466
Title
Experimental 3C-SiC MOSFET
Author
Kondo, Y. ; Takahashi, T. ; Ishii, K. ; Hayashi, Yutaka ; Sakuma, E. ; Misawa, S. ; Daimon, H. ; Yamanaka, M. ; Yoshida, S.
Author_Institution
Electrotechnical Laboratory, Ibaraki, Japan
Volume
7
Issue
7
fYear
1986
fDate
7/1/1986 12:00:00 AM
Firstpage
404
Lastpage
406
Abstract
Cubic-SiC (3C-SiC) MOSFET´s were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid SiC film.
Keywords
Aluminum; Fabrication; MOSFET circuits; Optical films; Semiconductor films; Silicon carbide; Silicon devices; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26417
Filename
1486240
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