MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates

Author

Oishi, Mamoru ; Nakao, Masashi ; Itaya, Yoshio ; Sato, Kenji ; Imamura, Yoshihiro

Author_Institution

NTT Electrical Communications Laboratories, Kanagawa, Japan

Volume

23

Issue

6

fYear

1987

fDate

6/1/1987 12:00:00 AM

Firstpage

822

Lastpage

827

Abstract

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz. Results of initial aging tests (APC of 5 mW at 25°C for longer than 3800 h) have shown no degradation in driving currents. It is found that low-pressure MOVPE is favorable for epitaxial growth on corrugated substrates.

Keywords

Corrugated surfaces; Distributed feedback (DFB) lasers; Epitaxial growth; Gallium materials/lasers; Diode lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium phosphide; Laser feedback; Laser modes; Optical device fabrication; Substrates; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1987.1073410

Filename

1073410