• DocumentCode
    1113517
  • Title

    Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition

  • Author

    Honda, Kazuo ; Hirata, Shoji ; Ohata, Toyoharu ; Horii, Shinichi ; Kojima, C.

  • Author_Institution
    Sony Corporation Research Center, Yokohama, Japan
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    839
  • Lastpage
    842
  • Abstract
    AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level.
  • Keywords
    Distributed feedback (DFB) lasers; Gallium materials/lasers; Semiconductor growth; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Gratings; Laser modes; MOCVD; Optical sensors; Surface emitting lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073413
  • Filename
    1073413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113517