Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

Author

Perndl, Werner ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Simbürger, Werner ; Scholtz, Arpad L.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

39

Issue

10

fYear

2004

Firstpage

1773

Lastpage

1777

Abstract

In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f_T SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.

Keywords

Ge-Si alloys; bipolar integrated circuits; phase noise; semiconductor materials; voltage-controlled oscillators; 12 mA; 200 GHz; 5 V; 80.5 to 84.8 GHz; 95.2 to 98.4 GHz; SiGe; SiGe bipolar technology; impedance transformation; offset frequency; on-chip transmission lines; phase noise measurement; voltage-controlled oscillator; waveguide; Circuits; Frequency; Germanium silicon alloys; Impedance; Noise measurement; Phase measurement; Phase noise; Power generation; Silicon germanium; Voltage-controlled oscillators; Phase noise; SiGe; VCO; phase noise measurement; voltage-controlled oscillator; waveguide;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.833757

Filename

1337009