DocumentCode
1113572
Title
Y-Junction semiconductor laser arrays: Part II--Experiments
Author
Welch, David F. ; Streifer, William ; Cross, Peter S. ; Scifres, Denold R.
Author_Institution
Spectra diode Laboratories, San Jose, CA
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
752
Lastpage
756
Abstract
Laser arrays employing
-junctions to coherently couple the emitters in-phase have been fabricated by metalorganic chemical vapor deposition. The far-field patterns are stable and centered normal to the facet. They are typically multilobed in accordance with the diffraction pattern of multiple emitters. By the use of flared waveguides near the facets the near-field fill factor can be increased to greater than 80 percent. This modification concentrates the radiation in the central diffraction lobe. Power outputs of 200 mW CW have been obtained from a ten element array of 1.5μm wide emitters.
-junctions to coherently couple the emitters in-phase have been fabricated by metalorganic chemical vapor deposition. The far-field patterns are stable and centered normal to the facet. They are typically multilobed in accordance with the diffraction pattern of multiple emitters. By the use of flared waveguides near the facets the near-field fill factor can be increased to greater than 80 percent. This modification concentrates the radiation in the central diffraction lobe. Power outputs of 200 mW CW have been obtained from a ten element array of 1.5μm wide emitters.Keywords
Laser arrays; Semiconductor lasers; Chemical vapor deposition; Diffraction; Laser modes; Optical arrays; Optical coupling; Optical waveguides; Refractive index; Semiconductor laser arrays; Substrates; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073418
Filename
1073418
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