DocumentCode
1113591
Title
A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVD
Author
Yoshikawa, Akio ; Yamamoto, Atsuya ; Hirose, Masanori ; Sugino, Takashi ; Kano, Gota ; Teramoto, Iwao
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
725
Lastpage
729
Abstract
A new technology of fabricating a buried heterostructure laser with a narrow active layer in a single-step MOCVD process other than the conventional two-step process is proposed. The technology is based on the separate growth on the undercut ridge. The anisotropic growth has been found to be very useful for formation of a very narrow active region in a self-aligned manner. The novel RBH laser implemented by the single-step MOCVD process has been proposed. The RBH laser has exhibited CW lasing oscillation with a threshold current as low as 30 mA at room temperature and with the circular beam spot.
Keywords
Gallium materials/lasers; Semiconductor growth; Anisotropic magnetoresistance; Chemical lasers; Chemical technology; Laser beams; Laser modes; Laser stability; MOCVD; Optical device fabrication; Substrates; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073419
Filename
1073419
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