Switching Waveforms of the L2FET: A 5-V Gate-Drive Power MOSFET

The switching waveforms of a newly announced series of power MOSFET devices called logic-level FET´s (L2FET´s) and featuring a 5-V gate drive are presented and contrasted with those of the more conventional 10-V gate-drive devices. A new method of characterizing MOSFET switching performance is discussed in which the MOSFET is treated as a vertical JFET driven in cascode from a low-voltage lateral MOS. The two-to-one advantage in rise and fall time and the four-to-one reduction in switching ``dynamic V(sat)´´ dissipation with constant drive power of the L2FET over the 10-V MOSFET are demonstrated and discussed.