• DocumentCode
    1115317
  • Title

    Transit-time photoconductivity in high-field FET channels

  • Author

    Darling, Robert B.

  • Author_Institution
    University of Washington, Seattle, WA
  • Volume
    34
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    433
  • Lastpage
    444
  • Abstract
    A solution to the photoconductive response of a high-field channel, such as that typified by a FET, is presented for the case of low-level generation. The theory of transit-time photoconductivity is extended to include arbitrary channel field, thickness, and carrier-density profiles, arbitrary carrier generation and injection conditions, carrier heating, and Poisson self-consistency. Several limiting cases are examined and the results are then applied to a Si MOSFET and a GaAs MESFET as two examples.
  • Keywords
    Charge carrier processes; Electron mobility; Electron optics; FETs; Gallium arsenide; High speed optical techniques; Optical saturation; Optical sensors; Photoconductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22940
  • Filename
    1486651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1115317