DocumentCode
1115352
Title
Charge-control analysis of the collector-base space-charge-region contribution to bipolar-transistor time constant τT
Author
Meyer, Robert G. ; Muller, Richard S.
Author_Institution
University of California, Berkeley, CA
Volume
34
Issue
2
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
450
Lastpage
452
Abstract
Charge-control analysis is used to show that the contribution of the collector-base space-charge region to bipolar transistor time constant τT is xd /2vd where xd is the space-charge-layer width and vl is the scattering-limited velocity of carriers.
Keywords
Bipolar transistors; Current measurement; Electrical resistance measurement; Equations; MOSFET circuits; Temperature; Testing; Time measurement; Time series analysis; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.22943
Filename
1486654
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