Successive oxide breakdown statistics: correlation effects, reliability methodologies, and their limits

Author

Suñé, Jordi ; Wu, Ernest Y. ; Lai, Wing L.

Author_Institution

Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain

Volume

51

Issue

10

fYear

2004

Firstpage

1584

Lastpage

1592

Abstract

This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established.

Keywords

MOS integrated circuits; correlation theory; reliability theory; semiconductor device breakdown; statistical analysis; MOS devices; breakdown current jumps; breakdown path; chip reliability assessment; correlation effects; dielectric breakdown; oxide breakdown statistics; reliability methodologies; reliability theory; successive breakdown theory; successive oxide breakdown events; Dielectrics; Digital circuits; Electric breakdown; FETs; Helium; MOS devices; Microelectronics; Reliability theory; Statistics; Testing; BD; Dielectric breakdown; MOS devices; reliability theory;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.835986

Filename

1337168