Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology

Author

Kaikai Xu ; Qi Yu ; Guannpyng Li

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

51

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

1

Lastpage

6

Abstract

Light emission has been observed from silicon devices in the reverse avalanche mode. Compared with Si-diode light-emitting device (LED) (a two-terminal device), Si-pMOSFET LED (a three-terminal device) in which the optical emission power emitted from the device is controlled by the insulated-gate terminal´s voltage V_g has been discussed. Being similar to Si-diode LED, Si-pMOSFET LED can also be monolithically integrated into optical-electro integrated circuit that is fully compatible with the silicon CMOS process technology. Light emission efficiency enhancement observed at lower electric driving power in the Si-pMOSFET LED is presented, and the reverse-biased junction configuration of the silicon LED emit light in a broad spectrum from 450 to 800 nm with characteristic peaks around ~650 nm.

Keywords

CMOS integrated circuits; MOSFET; avalanche photodiodes; integrated optoelectronics; light emitting diodes; light sources; silicon; Si-diode LED; Si-diode light-emitting device; Si-pMOSFET LED; electric driving power; insulated-gate terminal voltage; light emission efficiency enhancement; optical emission power; optical-electro integrated circuit; reverse avalanche mode; reverse-biased junction configuration; silicon CMOS process technology; silicon light-emitting device; standard Si-CMOS technology; three-terminal device; two-terminal device; wavelength 450 nm to 800 nm; Light emitting diodes; Logic gates; P-n junctions; Silicon; Stimulated emission; Substrates; Silicon light emitting device; emission efficiency; semiconductor integrated optoelectronics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2449759

Filename

7132700