Threshold Voltage and DIBL Variability Modeling Based on Forward and Reverse Measurements for SRAM and Analog MOSFETs

Author

Damrongplasit, Nattapol ; Zamudio, Luis ; Tsu-Jae King Liu ; Balasubramanian, Sriram

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA

Volume

62

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

1119

Lastpage

1126

Abstract

A physically based variability model is developed to explain threshold voltage ( $V_{T}$ ) and drain-induced barrier lowering (DIBL) variations, and their correlations for static RAMs (SRAMs) and analog devices fabricated in a 32-nm high- $K$ metal-gate technology. Inputs to the model rely on forward (F) and reverse (R) measurement of transistor pair mismatch. The modeling results are validated on SRAMs and analog devices. Asymmetric and symmetric variation components of $V_{T}$ and DIBL variability are extracted by the model. Asymmetric variation is a major component responsible for the higher $\\sigma V_{T}$ mismatch in saturation region compared with linear region, and higher DIBL variability.

Keywords

MOSFET; SRAM chips; high-k dielectric thin films; integrated circuit modelling; semiconductor device models; DIBL variability; DIBL variability modeling; SRAM; analog MOSFET; analog devices; asymmetric variation component; drain-induced barrier lowering variation; forward-reverse measurements; high-K metal-gate technology; linear region; physically-based variability model; saturation region; static RAM; symmetric variation component; threshold voltage; transistor pair mismatch; Correlation; Electric potential; Mathematical model; Random access memory; Standards; Threshold voltage; Transistors; Asymmetric; asymmetric halo; drain-induced barrier lowering (DIBL); forward; mismatch; random dopant fluctuation (RDF); reverse; static RAM (SRAM); threshold voltage; variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2408215

Filename

7064860