DocumentCode
1116029
Title
C2 F6 reactive ion-beam etching of LiNbO3 and Nb2 O5 and their application to optical waveguides
Author
Zhang, Bei ; Forouhar, Siamak ; Huang, S.Y. ; Chang, William S C
Author_Institution
University of California, San Diego, La Jolla, CA, USA
Volume
2
Issue
4
fYear
1984
fDate
8/1/1984 12:00:00 AM
Firstpage
528
Lastpage
530
Abstract
Properties of C2 F6 (freon 116) reactive ion-beam etching (RIBE) of LiNbO3 , Ti-indiffused LiNbO3 , and sputter-deposited Nb2 O5 film on LiNbO3 are reported. A maximum differential etching ratio of approximately 5:1 has been measured for LiNbO3 and the AZ 1350B Shipley photoresist. We have used this etching technique to fabricate diffraction gratings on both Ti-indiffused LiNbO3 and Nb2 O5 - LiNbO3 waveguides with measured throughput efficiencies in excess of 85 percent.
Keywords
Optical planar waveguides; Planar optical waveguide; Chemical processes; Control systems; Dry etching; Ion beams; Optical films; Optical waveguides; Resists; Sputter etching; Weight control; Wet etching;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1984.1073644
Filename
1073644
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