DocumentCode
1116772
Title
High-efficiency 35-GHz GaAs MESFET´s
Author
Taylor, Gordon C. ; Eron, Murat ; Bechtle, Daniel W. ; Liu, Shing-Gong ; Camisa, Raymond L.
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
34
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
1259
Lastpage
1263
Abstract
Ka-band GaAs FET´s with power output in excess of 200 mW and with efficiencies of more than 20 percent are described. Both ion-implanted and VPE-grown wafers were used. Deep UV (300-nm) lithography and chemical etching was employed to obtain a final gate length of 0.5 µm. These FET chips were flip-chip mounted and had a very low thermal resistance of 50°C/W for a total source periphery of 0.6 mm. At 35 GHz an output power of 220 mW with 21-percent efficiency at 3-dB gain was obtained from a 0.6-mm cell.
Keywords
Chemicals; FETs; Fingers; Frequency; Gallium arsenide; Lithography; MESFETs; Power generation; Substrates; Thermal resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23079
Filename
1486790
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