An associative memory based on an electronic neural network architecture

A high-density matrix of α-Si resistors was made to demonstrate a new type of parallel-processing associative memory consisting of an interconnected array of analog amplifiers. The 22 × 22 resistor matrix was made using a technology compatible with conventional VLSI processing. This demonstration circuit can recall up to four 22- bit memories in 1 to 10 µs while correcting errors in the input word of at least 5 bits. This function is difficult to perform efficiently in conventional digital hardware and is the basis for solving a variety of pattern-recognition problems including vision and speech.