Hysteresis effects and bistable switching in SIS´IS tunnel junctions

Author

Blamire, M.G. ; Kirk, E.C.G. ; Somekh, R.E. ; Evetts, J.E.

Author_Institution

Dept. of Mater. Sci. & Metall., Cambridge Univ., UK

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

2598

Lastpage

2601

Abstract

Experimental results that show that gap enhancement can result in a novel double hysteretic structure in the subgap region which arises from a transition from finite to zero voltage across one barrier are presented. Within this hysteretic voltage state, it is possible to switch between two stable voltage levels by the application of an appropriate current pulse. The voltage swings possible in such a device are shown to be on the order of the gap voltage, and the holding currents required to maintain the bistable states are less than 20% of the current rise at the sum of the gaps. The device appears to have potential as a low-dissipation latch

Keywords

superconducting junction devices; superconductive tunnelling; SIS´IS tunnel junctions; bistable states; bistable switching; current pulse; double hysteretic structure; gap enhancement; gap voltage; holding currents; low-dissipation latch; stable voltage levels; subgap region; Artificial intelligence; Etching; Fabrication; Hysteresis; Kirk field collapse effect; Niobium; Oxidation; Switches; Temperature; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133747

Filename

133747