• DocumentCode
    1118336
  • Title

    Effect of diffusion and modulated frequency in an ion-implanted OPFET

  • Author

    Singh, V.K. ; Pal, B.B.

  • Author_Institution
    Banaras Hindu University, Varanasi, India
  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2270
  • Lastpage
    2279
  • Abstract
    Studies have been made on the effect of diffusion and modulated frequencies in an ion-implanted Si photo MESFET (OPFET). It is observed that for a particular radiation flux density and absorption coefficient, the device characteristics ( I-V ), threshold voltage (VT), and intrinsic device parameters (Cgs,Rasds, etc.) change only at millimeter-wave frequencies. When the effect of diffusion is ignored, the modulated frequency alone also changes these terminal properties of the OP-FET at millimeter-wave frequencies, but then the changes are more prominent. The diffusion simply reduces these effects.
  • Keywords
    Frequency modulation; Gallium arsenide; High speed optical techniques; MESFETs; Optical control; Optical devices; Optical modulation; Optical surface waves; Stimulated emission; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23231
  • Filename
    1486942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118336