• DocumentCode
    1118416
  • Title

    Electromigration and low-frequency resistance fluctuations in aluminum thin-film interconnections

  • Author

    Neri, Bruno ; Diligenti, Alessandro ; Bagnoli, Paolo Emilio

  • Author_Institution
    Università degli Studi di Pisa, Pisa, Italy
  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2317
  • Lastpage
    2322
  • Abstract
    Low-frequency noise spectra originating from resistance fluctuations in Al films during electromigration were measured in the absolute temperature and current density intervals 327 \\leq T \\leq 396 K and 1.34 \\times 10^{6} \\leq j \\leq 2.22 \\times 10^{6} A/cm2. The values of SR, the resistance power spectral density, at 20 × 10-3Hz allowed the construction of an Arrhenius plot from which a grain-boundary activation energy value of about 0.6 eV was deduced. This value lies in the range of values found by other authors using different techniques. A first attempt to model the observed dependence of SRon j and T is also described.
  • Keywords
    Aluminum; Current measurement; Density measurement; Electrical resistance measurement; Electromigration; Fluctuations; Low-frequency noise; Noise measurement; Temperature; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23238
  • Filename
    1486949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118416