IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p⁺-GaAs buffer layers

Author

Chen, Y.K. ; Radulescu, D.C. ; Foisy, M.C. ; Tasker, P.J. ; Eastman, L.F.

Volume

Issue

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2356

Lastpage

2357

Keywords

Atomic layer deposition; Buffer layers; Electrons; Gain; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Superlattices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1987.23245

Filename

1486956

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