DocumentCode

1118749

Title

IIIB-3 modified Schottky behavior in shallow p⁺-n junctions formed by outdiffusion from Cobalt silicide

Author

Liu, Richard ; Hillenius ; Lynch, W.T.

Volume

34

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2366

Lastpage

2366

Keywords

CMOS process; Circuits; Cobalt; Degradation; Gain measurement; Implants; Schottky diodes; Semiconductor process modeling; Silicides; Thermionic emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1987.23272

Filename

1486983