DocumentCode
1118791
Title
Enhanced transconductance in deep submicrometer MOSFET
Author
Hänsch, W. ; Jacobs, H.
Author_Institution
Siemens AG, Munich, West Germany
Volume
10
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
285
Lastpage
287
Abstract
It is shown that the enhanced transconductance observed in deep submicrometer MOSFETs at 77 and 300 K can be modeled using an extended drift-diffusion approximation with mobility parameters taken from measurements on MOSFETs of the 4-Mb DRAM generation. For the terminal characteristics of these devices, velocity overshoot is of little importance for devices with channel lengths larger than 60 nm.<>
Keywords
carrier mobility; insulated gate field effect transistors; semiconductor device models; 300 K; 60 nm; 77 K; channel lengths; deep submicrometer MOSFET; extended drift-diffusion approximation; mobility parameters; modelling; submicron devices; terminal characteristics; transconductance; velocity overshoot; Circuit simulation; Circuit synthesis; Jacobian matrices; MOSFET circuits; Monte Carlo methods; Predictive models; Random access memory; Semiconductor process modeling; Silicon; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.29654
Filename
29654
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