• DocumentCode
    1118793
  • Title

    IIIB-7 technology for submicrometer Si/CoSi2Si epitaxial permeable-base transistor

  • Author

    Glastre, Genevieve ; Vincent, Gregory ; Vareille, A. ; Puissant, C. ; Rosencher, E.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2368
  • Lastpage
    2368
  • Keywords
    Etching; Gratings; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Semiconductor materials; Silicon; Surface cleaning; Surface contamination; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23276
  • Filename
    1486987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118793