• DocumentCode
    1118837
  • Title

    IVA-5 refractory p-ohmic-contact to GaAs and GaxAl1-xAs (x ~ 0.3) based on diffusion of Zn in a rapid thermal furnace

  • Author

    Tiwari, Sunita ; Callegari, A. ; Wright, S.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2370
  • Lastpage
    2371
  • Keywords
    Electrical resistance measurement; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Implants; Ohmic contacts; Optical films; Rapid thermal processing; Solids; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23281
  • Filename
    1486992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118837