• DocumentCode
    1118896
  • Title

    IVB-2 memory effect and enhanced conductivity in Si-implanted thermally grown SiO2

  • Author

    Kalnitsky, Alex ; King, M.I.H. ; Boothroyd, A.R. ; Ellul, J.P.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2372
  • Lastpage
    2372
  • Keywords
    Annealing; Contacts; Dielectrics; EPROM; Electron traps; Material storage; Nonvolatile memory; Optical refraction; Thermal conductivity; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23286
  • Filename
    1486997