DocumentCode

1118974

Title

VA-3 GaAs MESFET´s with a LaB6self-aligned gate

Author

Takatani, S. ; Uchida, Yasuo ; Yokotsuka, T. ; Nakashima, Hideharu

Volume

34

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2375

Lastpage

2376

Keywords

Annealing; Breakdown voltage; Contacts; Gallium arsenide; MESFETs; Nitrogen; Schottky barriers; Schottky diodes; Tin; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1987.23293

Filename

1487004