• DocumentCode
    1119211
  • Title

    Barrier-Layer Scaling of InAlN/GaN HEMTs

  • Author

    Medjdoub, F. ; Alomari, M. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Grandjean, N. ; Kohn, E.

  • Author_Institution
    Univ. of Ulm, Ulm
  • Volume
    29
  • Issue
    5
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    422
  • Lastpage
    425
  • Abstract
    We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at VG = 2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000degC).
  • Keywords
    III-V semiconductors; MOCVD coatings; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; indium compounds; sapphire; HEMT; InAlN-GaN; barrier-layer scaling; gate forward drive limitation; metal-organic chemical vapor deposition; residual surface-depletion effect; size 3 nm to 33 nm; ultrathin barrier; GaN based; InAlN barrier; high-electron mobility transistors (HEMTs); microwave devices; scaling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.919377
  • Filename
    4481215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119211