DocumentCode
1119228
Title
p-channel germanium MOSFETs with high channel mobility
Author
Martin, Suzanne C. ; Hitt, Lorin M. ; Rosenberg, James J.
Author_Institution
Div. of Eng., Brown Univ., Providence, RI, USA
Volume
10
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
325
Lastpage
326
Abstract
The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm/sup 2//V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.<>
Keywords
CMOS integrated circuits; elemental semiconductors; germanium; insulated gate field effect transistors; CMOS technology; Ge; MOSFETs; circuit integration; common source characteristics; elemental semiconductors; fabrication; high channel mobility; nitrided native oxide gate insulator; p-channel; self-aligned dummy-gate process; CMOS technology; Charge carrier processes; Electron mobility; Fabrication; Germanium; Implants; Insulation; MOSFETs; Resists; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.29667
Filename
29667
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