• DocumentCode
    1119253
  • Title

    Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structures

  • Author

    Umimoto, H. ; Odanaka, S. ; Nakao, I.

  • Author_Institution
    Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • Volume
    10
  • Issue
    7
  • fYear
    1989
  • fDate
    7/1/1989 12:00:00 AM
  • Firstpage
    330
  • Lastpage
    332
  • Abstract
    A numerical simulation of oxide thinning at convex and concave corners of trench structures is discussed. The stress effect on the oxide growth is modeled by solving oxidation kinetic equations including stress-dependent physical parameters. The different mechanism for oxide thinning at both corners has been clearly revealed by a comparison of oxide shapes obtained by cross-sectional transmission electron microscope (TEM) photographs and simulations. The oxide thinning at convex corners is caused by the stress-dependent surface reaction, and the oxide thinning at concave corners is caused by the stress-dependent oxidant diffusion.<>
  • Keywords
    oxidation; semiconductor technology; simulation; stress effects; transmission electron microscope examination of materials; concave corners; convex corners; cross sectional TEM photographs; numerical simulation; oxidation kinetic equations; oxide thinning; semiconductor device fabrication; stress effect; stress-dependent oxidant diffusion; stress-dependent oxide growth; stress-dependent physical parameters; stress-dependent surface reaction; transmission electron microscope; trench structures; Numerical models; Numerical simulation; Oxidation; Shape; Silicon; Stress; Temperature dependence; Temperature distribution; Viscosity;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.29669
  • Filename
    29669