A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications

Author

Zirngibl, M. ; Bischoff, J.C. ; Theron, D. ; Ilegems, Marc

Author_Institution

Inst. of Micro- & Optoelectron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

10

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

336

Lastpage

338

Abstract

A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 mu m is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460 degrees C. The large size detector (200*200 mu m/sup 2/) shows bias-dependent DC gain, fast response speed (FWHM <50 ps), and reasonably low dark current.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical communication equipment; photodetectors; semiconductor superlattices; 1.3 to 1.35 micron; 200 micron; 460 degC; 50 ps; GaAs substrate; III-V semiconductors; InGaAs-GaAs; MBE; MSM device; bias-dependent DC gain; fast response speed; large size detector; low dark current; metal-semiconductor-metal detector; molecular beam epitaxy; optical communication equipment; photodetector; photoresponse; superlattice active layer; Dark current; Detectors; Gallium arsenide; Metallic superlattices; Optical buffering; Optical materials; Optical superlattices; Photodetectors; Stimulated emission; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.29671

Filename

29671