• DocumentCode
    1119515
  • Title

    Counting of deep-level traps using a charge-coupled device

  • Author

    McGrath, R.D. ; Doty, J. ; Lupino, G. ; Ricker, G. ; Vallerga, J.

  • Author_Institution
    Polaroid Corporation, Cambridge, MA
  • Volume
    34
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    2555
  • Lastpage
    2557
  • Abstract
    Quantization in dark current generation has been observed for the first time through the use of a virtual-phase charge-coupled device. Two sites for bulk silicon dark current have been identified with capture cross sections of 1.8 × 10-15cm2and 5.4 × 10-16cm2, and concentrations of 1.3 × 109cm-3and 1.5 × 108cm-3, respectively.
  • Keywords
    Charge coupled devices; Dark current; Electron traps; Energy states; Impurities; Leakage current; MOS devices; Silicon; Space charge; Space technology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23348
  • Filename
    1487059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119515